Thin film transistor array panel and display device including the same

ABSTRACT

Gate-driving circuitry of a thin film transistor array panel is formed on the same plane as a display area of the transistor array panel. The gate-driving circuitry includes driving circuitry and signal lines having apertures. Thus, a sufficient amount of light, even though illuminated from the thin film transistor array panel side, can reach a photosetting sealant overlapping at least in part the gate-driving circuitry. The thin film transistor array panel and the counter panel are put together air-tight and moisture-tight. Consequently, the gate-driving circuitry can avoid corrosion by moisture introduced from outside. Gate-driving circuitry malfunctions can also be reduced.

RELATED APPLICATIONS

This application claims the benefit and priority of Korean PatentApplication Serial Nos. 10-2004-0058708 filed on Jul. 27, 2004 and10-2004-0077500 filed on Sep. 24, 2004, which are incorporated herein byreference in its entirety.

TECHNICAL FIELD

The present invention relates to display device technology and, moreparticularly, to the design and the application of thin film transistorarray panels and display devices including such thin film transistorarray panels.

BACKGROUND

In general, a display device includes a display panel, gate-drivingcircuitry and data-driving circuitry. The display panel includes a thinfilm transistor array panel having gate lines, data lines, pixelelectrodes and thin film transistors, an opposite panel having one ormore common electrodes, and a liquid crystal layer provided between thetwo panels. The two panels are aligned and sealed by a sealant. Thegate-driving circuitry and the data-driving circuitry are usuallyprovided on a printed circuit board, or as integrated circuits connectedto the display panel.

Recently, the gate-driving circuitry has been formed directly on thethin film transistor array panel in order to minimize device size and toincrease efficiency. In such a structure, however, a parasiticcapacitance is created between the gate-driving circuitry and the commonelectrode or electrodes on the opposite panel, which may cause thegate-driving circuitry to malfunction. Because the dielectric constantof the sealant is less than that of the liquid crystal molecules, it hasbeen proposed to provide the sealant between the gate-driving circuitryand the opposite panel to reduce the parasitic capacitance.

As display devices become larger, the one-drop-filling (ODF) method iswidely used with a photosetting sealant to provide the liquid crystalmaterial between the two panels. The photosetting sealant, which holdsthe two panels, is hardened by exposure to light. The sealant isirradiated from the thin film transistor array panel side because anopaque layer is usually formed on the opposite panel facing thegate-driving circuitry. Irradiating from the thin film transistor arraypanel side, however, may lead to insufficient light to harden thesealant, especially when the width of a signal line, or a transistor, inthe gate-driving circuitry, is larger than 100 μm. Consequently, the twopanels may be susceptible to moisture entered through the insufficientlycured sealant, leading to corrosion in the gate-driving circuitry.

Accordingly, there is a need for a display device with gate drivingcircuitry that overcomes the disadvantages discussed above.

SUMMARY

Devices and methods disclosed herein are applicable to thin filmtransistor array panels and display devices. For example, in accordancewith an embodiment of the present invention, a display device includes athin film transistor array panel, a counter panel, a sealant, and aliquid crystal layer, which is provided in the space enclosed by thethin film transistor array panel, the counter panel and the sealant.Gate-driving circuitry which includes signal lines and drivingcircuitry, may be formed directly on the thin film transistor arraypanel and overlapped at least in part by the sealant and an opaqueregion of the counter panel.

An aperture may be formed on one or more signal lines, to allow lightilluminating from the thin film transistor array panel side to easilypass, so as to facilitate the photoset sealant to harden. The signallines may be formed as a ladder or a net-shaped structure. Such a ladderor net-shaped signal line may include vertical and horizontal branchesbetween and connecting adjacent vertical branches. The width of avertical or horizontal branch, or the width of the aperture, can bedesigned to facilitate light to pass through (e.g., about 20˜30 μm,preferably about 25 μm). The signal line structure described above isespecially suited for a signal line that is more than 100 μm wide.

The driving circuitry may include transistors connected in parallel andspaced apart to form one or more apertures among the transistors. Theaperture width can be determined for easy light passage, e.g., about20˜100 μm wide.

With such apertures in the gate-driving circuitry, sufficient light isable to pass to harden the sealant, thereby holding the panels air-tightor moisture-tight. Consequently, the gate-driving circuitry can avoidcorrosion by moisture from outside, and malfunctions in the gate-drivingcircuitry of the display device can be reduced.

The scope of the invention is defined by the claims. A more completedescription of the embodiments of the present invention and theiradvantages are provided in the following.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an exemplary layout view of a display device in accordancewith an embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along the line II-II′ of FIG. 1.

FIG. 3 is an exemplary block diagram of a shift register in thegate-driving circuitry, according to an embodiment of the presentinvention.

FIG. 4 is an exemplary circuit implementation of a j-th stage of theshift register of FIG. 3.

FIG. 5 is an exemplary layout view of the gate-driving circuitry inaccordance with an embodiment of the present invention.

FIG. 6 is an exemplary layout view of the signal lines of thegate-driving circuitry of FIG. 5.

FIG. 7 is a cross-sectional view taken along the line VII-VII′ of FIG.6.

FIG. 8 is an exemplary layout view of the driving circuitry of thegate-driving circuitry of FIG. 5.

FIG. 9 is a cross-sectional view taken along the line IX-IX′ of FIG. 8.

FIG. 10 is an exemplary layout view of a pixel in a display area.

FIG. 11 is a cross-sectional view taken along the line XI-XI′ of FIG.10.

Like reference numerals are used to identify like elements in thefigures. Furthermore, the elements or layers may not be drawn to scaleand may be magnified for clarity (e.g., when illustrating semiconductorlayers), Also, the words “above” or “on” may be used, for example, torefer to a position of a layer, an area, or a plate relative to anotherreferenced element, but such use is not intended to exclude anintermediate element disposed between the referenced element and thelayer, area, or plate. However, the terms “directly above” or “directlyon” are used to indicate that no intermediate element exists between thereferenced element and the layer, area, or plate.

DETAILED DESCRIPTION

FIG. 1 is an exemplary layout view of a display device 600 in accordancewith an embodiment of the present invention, and FIG. 2 is across-sectional view taken along the line II-II′ of FIG. 1. As shown inFIGS. 1 and 2, display device 600 includes a display panel 300displaying an image under control of the gate signals and data signals,which are provided by gate-driving circuitry 400 and data-drivingcircuitry 500, respectively. The display area DA and the gate-drivingcircuitry 400 may be formed on a single substrate, such as substrate 110of FIG. 2.

The display panel 300 includes a thin film transistor array panel 100, acounter panel 200 opposite the thin film transistor array panel 100, asealant 350 and a liquid crystal layer 330 provided in a space enclosedby the thin film transistor array panel 100, counter panel 200 andsealant 350.

The display panel 300 may be divided into a display area DA, a sealantarea SA enclosing the display area DA, a first peripheral area PA1outside the display area DA, and a second peripheral area PA2overlapping at least in part the display area DA and the sealant areaSA. The thin film transistor array panel 100 covers the display area DA,the sealant area SA, and the peripheral areas PA1 and PA2, while thecounter panel 200 may not cover the first peripheral area PA1.

An equivalent circuit for the display panel 300 includes gate linesGL₁˜GL_(n), data lines DL₁˜DL_(m) and pixels electrically connected tothem.

Gate lines GL₁˜GL_(n) and data lines DL₁˜D_(m) are formed on a firstsubstrate 110, insulated from and crossing each other on the displayarea DA, and extending to the second and first peripheral areas PA2 andPA1, respectively. Gate lines GL₁˜GL_(n) and data lines DL₁˜DL_(m) areconnected to the gate-driving circuitry 400 and the data-drivingcircuitry 500, respectively.

Each pixel includes a liquid crystal capacitance C_(1c), a thin filmtransistor Tr electrically connected to a corresponding gate line, and acorresponding data line.

The thin film transistor Tr is formed on the thin film transistor arraypanel 100, and includes a gate electrode connected to the gate line, asource electrode connected to the data line, and a drain electrodeconnected to the liquid crystal capacitance C_(1c). The thin filmtransistor Tr also includes an amorphous silicon (a-Si) or apolycrystalline silicon.

The liquid crystal capacitance C_(1c) includes a pixel electrode (notshown) formed on the thin film transistor array panel 100, a counterelectrode 270 formed on a second substrate 210, and the liquid crystallayer 330 disposed between the pixel electrode and the counter electrode270. The pixel electrode is electrically connected to the thin filmtransistor Tr, and the counter electrode 270 is electrically connectedto a common voltage source.

The data-driving circuitry 500 may be mounted as integrated-circuits onthe first peripheral area PA1 of the thin film transistor array panel100, instead of being provided on a printed circuit board (PCB). Thedata-driving circuitry 500 is electrically connected to the data linesDL₁˜DL_(m), which carry the data signals. The gate-driving circuitry 400is formed on the second peripheral area PA2 of the thin film transistorarray panel 100 and is electrically connected to the gate linesGL₁˜GL_(n), which carry the gate signals.

The sealant 350 is provided in the sealant area SA. The liquid crystallayer 330 is sealed and the two panels 100 and 200 are held in place bythe sealant 350. The sealant 350 includes a photosetting material.

The sealant 350 overlaps at least in part the gate-driving circuitry400. The typical dielectric constant of the sealant 350 is about 4.0,compared with the 10.0 or more dielectric constant of the liquid crystallayer 330. Therefore, parasitic capacitance between the gate-drivingcircuitry 400 and the counter electrode 270 can be significantlyreduced.

As shown in FIG. 2, the counter panel 200 may further include an opaqueregion 220 or a color filter layer (not shown) between the secondsubstrate 210 and the counter electrode 270. The color filter layer maybe formed on the thin film transistor array panel 100.

The liquid crystal layer 330 can be introduced into the space enclosedby the thin film transistor array panel 100, the counter panel 200 andthe sealant 350 using a so-called one-drop-filling (ODF) method. In theODF method, a liquid crystal drop is provided on either the thin filmtransistor array panel 100, or the counter panel 200, and the sealant350 is provided on either the thin film transistor array panel 100 orthe counter panel 200. The sealant 350 is irradiated by light to behardened, after alignment with the thin film transistor panel 100 andthe counter panel 200 is performed. The light is provided from the sideof the thin film transistor array panel 100, so as not to be blocked bythe opaque region 220, which would have been the case if the sealant 350is illuminated from the side of the counter panel 200.

FIG. 3 is an exemplary block diagram of a shift register of the gatedriving portion 400 in accordance with an embodiment of the presentinvention. FIG. 4 is an exemplary circuit implementation of one stage(e.g., a j-th stage) of the shift register of FIG. 3.

As shown in FIG. 3, the gate-driving circuitry 400 includes n+1 cascadedstages ST₁˜ST_(n+1) that are connected to respective gate linesG₁˜G_(n), except for the last stage ST_(n+1). Also, as a shift register,the gate-driving circuitry 400 may receive the gate-off voltage V_(off),first and second clock signals CKV and CKVB, an initialization signalINT and a scan starting signal STV.

Each stage may include a gate voltage terminal GV, first and secondclock terminals CK1 and CK2, a set terminal S, a reset terminal R, aframe reset terminal FR, a gate output terminal OUT1, and a carry outputterminal OUT2. In each stage (e.g., the j-th stage ST_(j)), the setterminal receives the carry output C_(out)(j−1) of the previous stageST_(j−1) while the reset terminal R receives the gate outputG_(out)(j+1) of the next stage ST_(j+1). Also, the first and secondclock terminals CK1 and CK2 receive the complementary first and secondclock signals CKV and CKVB, respectively, and the gate voltage terminalGV receives the gate-off voltage V_(off). The stage provides gate outputsignal G_(out)(j) at gate output terminal OUT1 and a carry output signalC_(out)(j) via the carry output terminal OUT2. (In this embodiment, thefirst and second clock signals CKV and CKVB have a 50% duty ratio and a180° phase difference).

The first stage of the shift register (i.e., ST₁) receives a scanstarting signal STV. Successive stages receiver alternate phases ofcomplementary clock signals CKV and CKVB. That is, if the first andsecond clock terminals CK1 and CK2 receive the first and second clocksignals CKV and CKVB, respectively, in the j-th stage ST_(j), the firstand second clock terminals CK1 and CK2 receive the second and firstclock signals CKVB and CKV, respectively.

In order to drive the thin film transistor Tr of the pixel, the highsignals of the first and second clock signals CKV and CKVB may be thegate-on voltage V_(on), while the low signals of the first and secondclock signals CKV and CKVB may be the gate-off voltage V_(off).

Referring to FIG. 4, the j-th stage ST_(j) of the gate-driving circuitry400 includes an input circuit 420, a pull-up driving circuit 430, apull-down driving circuit 440, and an output circuit 450. The j-th stageST_(j) includes transistors T1˜T15 (e.g., NMOS transistors), with thepull-up driving circuit 430 and the output circuit 450 further includingcapacitors C1˜C3. Although NMOS transistors are illustrated, PMOStransistors or other types of transistors may be used instead of theNMOS transistors. Also, any of the capacitors C1˜C3 can be a parasiticcapacitor between the gate and the drain/source terminals of atransistor, formed during manufacturing.

In this embodiment, the input circuit 420 includes a set terminal S andthree transistors T5, T10 and T11, connected in series to the gatevoltage terminal GV. The gates of the two transistors T5 and T11 areconnected to the second clock terminal CK2, and the gate of transistorT10 is connected to the first clock terminal CK1. The junction pointbetween the transistor T11 and the transistor T10 is connected to thejunction point J1, and the junction point between the transistor T5 andthe transistor T10 is connected to the junction point J2.

As shown in FIG. 4, pull-up driving circuit 430 includes a transistor T4between the set terminal S and junction point J1, a transistor T12between the first clock terminal CK1 and the junction point J3, and thetransistor T7 between the first clock terminal CK1 and the junctionpoint J4. The gate and the drain of the transistor T4 are commonlyconnected to the set terminal S, while the source is connected to thejunction point J1. Similarly, the gate and the drain of the transistorT12 are commonly connected to the first clock terminal CK1, while thesource is connected to the junction point J3.

The gate of the transistor T7 is connected to both the junction point J3and the first clock terminal CK1. The drain of the transistor T7 isconnected to the first clock terminal CK1. The source of the transistorT7 is connected to the junction point J4. The capacitor C2 is locatedbetween the junction J3 and the junction J4.

Pull-down driving circuit 440 includes transistors T6, T9, T13, T8, T3,and T2, which have sources for receiving the gate-off voltage V_(off)and drains for transferring the gate-off voltage V_(off) to the junctionpoints J1, J2, J3, and J4. The transistor T9 has a gate connected to thereset terminal R, and a drain connected to the junction point J1. Thetransistors T13 and T8 have their gates commonly connected to thejunction point J2, and their drains connected to the junction points J3and J4, respectively. The transistors T2 and T3 have gates connected tothe junction point J4 and to the reset terminal R, respectively, and adrain, which is commonly connected to the junction point J2. Thetransistor T6 has a gate connected to the frame reset terminal FR and adrain connected to the junction point J1.

The output circuit 450 may include a capacitor C3 and two transistors T1and T15. The gates of the transistors T1 and T15 are commonly connectedto the junction point J1, while their sources are connected to the firstclock terminal CK1. The transistors T1 and T15 have their drainsrespectively coupled to the output terminals OUT1 and OUT2. Thecapacitor C3 is between the junction point J1 and J2. The drain of thetransistor T1 is also connected to the junction point J2.

Now the operation of the exemplary stage ST_(j) of FIG. 4 is explained.The high voltage state of a signal is called a “high signal” throughoutthis specification; the low voltage state of a signal is called a “lowsignal” and may be substantially the same as the gate-off voltageV_(off).

With the second clock signal CKVB and the previous carry outputC_(out)(j−1) both carrying a high signal, the transistors T11, T5, andT4 are turned on. Then, the two transistors T11 and T4 transmit a highsignal to the junction point J1, while the transistor T5 transmits a lowsignal to the junction point J2. Thereafter, the transistors T1 and T15are turned on and the first clock signal CKV is transmitted to theoutput terminals OUT1 and OUT2.

Because the signal of the junction point J2 and the first clock signalCKV are low signals, the output signals G_(out)(j) and C_(out)(j) arelow signals; simultaneously, the capacitor C3 is charged to the voltagedifference between the high signal and the low signal.

At this time, because the signal clock CKV, the next gate outputG_(out)(j+1) and the junction point J2 are all low signals, theconnected transistors T10, T9, T12, T13, T8, and T2 all turn off.

Subsequently, the transistors T11 and T5 turn off when the second clocksignal CKVB is low; simultaneously, the output signal of the transistorT1 and the signal of the junction point J2 are high signals when thefirst clock signal CKV is a high signal. At this time, because the gateand the source of the transistor T10 have high signals, the zero voltagedifference turns off the transistor T10. Accordingly, the high signal ofthe capacitor C3 is added to the floating junction point J1.

The high signal of the first clock signal CKV and the junction point J2turn on the transistors T12, T13 and T8. The directly connectedtransistors T12 and T13 are in voltages between the high signal and thelow signal and determine the divided potential of the junction point J3according to the resistance of the turned on transistors T12 and T13.

Here, if the resistance of the transistor T 13 in its turn-on state isgreater than that of the transistor T12 in its turn-on state (e.g.,10,000 times greater), the voltage of the junction point J3 issubstantially the same as the high signal. Subsequently, the transistorT7 is turned on, and the voltage of the junction point J4 is determinedby the turn-on resistance of the transistors T7 and T8.

With the transistors T7 and T8 having substantially the same resistance,the junction point J4 has a voltage intermediate between the high signaland the low signal; thus, the transistor T3 remains turned off. Also,the transistors T9 and T2 remain turned off because the next gate outputG_(out)(j+1) stays at low signal.

Accordingly, the output terminals OUT1 and OUT2 transmit high signals bybeing isolated from a low signal and being connected to the first clocksignal CKV. The capacitors C1 and C2 are charged by the respectivepotential difference of their terminals, and the potential of thejunction point J3 is lower than the potential of the junction point J5.

When the next gate output signal G_(out)(j+1) and the second clocksignal CKVB have high signals and the first clock signal CKV has a lowsignal, the transistors T9 and T2 are turned on and transmit low signalsto the junction points J1 and J2. The voltage of the junction point J1is lowered by discharging the capacitor C3 to the low voltage.

Accordingly, the two transistors T1 and T15 remain turned on for a timeperiod after the next gate output G_(out)(j+1) has a high signal; then,the output terminals OUT1 and OUT2 transmit low signals, being connectedto the first clock signal CKV.

Next, the carry output C_(out)(j) is floating and remains a low signalbecause the output terminal OUT2 is isolated from the first clock signalCKV by turning off the transistor T15, which results from the completedischarge of the capacitor C3 and the low voltage of the junction pointJ1. Simultaneously, even when the transistor T1 is turned off, theoutput terminal OUT1 continuously transmits a low voltage because of theconnection with the low signal via transistor T2.

The junction point J3 is isolated because the transistors T12 and T13are turned off. Also, the voltage of the junction point J5 is lower thanthat of the junction point J4, and the transistor T7 is turned offbecause the voltage of the junction point J3 remains lower than that ofthe junction point J5 by the voltage on capacitor C1. Simultaneously,due to the transistor T8 being turned off, the voltage of the junctionpoint J4 is lowered. Also, the transistor T10 remains turned off becauseits gate is connected to the low voltage of the first clock signal CKVand the signal of the junction point J2 is low.

Next, with the first clock signal CKV being high, the transistors T12and T7 are turned on, and with the voltage of the junction point J4increasing, the transistor T3 is turned on and transmits a low signal tothe junction point J2 to make the output terminal OUT1 transmit the lowsignal. That is, even though the output of the next gate outputG_(out)(j+1) has a low signal, the voltage of the junction point J2 maybe a low signal.

Having the gate connected to the high first clock signal CKV and lowsignal junction point J2, the transistor T10 is turned on and transmitsthe low voltage of the junction point J2 to the junction point J1. Thesources of the transistors T1 and T15 receive the first clock signal CKVcontinuously because the sources are connected to the first clockterminal CK1. Furthermore, because the transistor T1 is larger than theother transistors, the change of the source voltage can affect the gatevoltage because of the large parasitic capacitance between the gate andthe source in transistor T1.

Therefore, with the high clock signal CKV, the transistor T1 can beturned on due to the parasitic capacitance between its gate and itssource. To prevent switching on the transistor T1, the gate signal ofthe transistor T1 is maintained as a low signal by transmitting the lowsignal of the junction point J2 to the junction point J1.

Later on, until the previous carry output C_(out)(j−1) attains a highvoltage, the junction point J1 maintains the low signal. The junctionpoint J2 maintains a low voltage via the transistor T3 when the firstclock signal CKV is a high voltage and the second clock signal CKVB is alow voltage; otherwise, with low first clock signal CKV and high secondclock signal CKVB, the junction point J2 maintains a low voltage via thetransistor T5.

Receiving an initialization signal INT from the carry outputC_(out)(n+1) of the last dummy stage ST_(n+1), the transistor T6transmits the gate-off signal V_(off) to the junction point J1.

As explained above, the j-th stage ST_(j) generates the carry signalC_(out)(j) and the gate signal G_(out)(j) based on the previous carrysignal C_(out)(j−1), the next gate signal G_(out)(j+1), the first andsecond clock signals CKV and CKVB.

An exemplary implementation of the gate-driving circuitry 400 is nowexplained in reference to FIGS. 5, 6 and 8. FIG. 5 is an exemplarylayout view of the gate-driving circuitry in accordance with anembodiment of the present invention. FIG. 6 is an exemplary layout viewof signal lines of the gate driving portion of FIG. 5. FIG. 8 is anexemplary layout view of a driving circuitry of the gate-drivingcircuitry of FIG. 5.

As shown in FIG. 5, the gate-driving circuitry 400 in accordance with anembodiment of the present invention includes a driving circuitry CShaving cascaded stages ST₁˜ST_(n+1), and a set of signal lines SLtransmitting various signals, for example, V_(off), CKV, CKVB and INT tocascaded stages ST₁˜ST_(n+1).

The set of signal lines may include a gate-off signal line SL1transmitting the gate-off signal V_(off), first and second clock signallines SL2 and SL3 transmitting first and second clock signals CKV andCKVB, respectively, and an initialization signal line SL4 transmittingthe initialization signal INT. The signal lines SL1˜SL4 extendvertically. The gate-driving circuitry 400 may further include bridgelines 172 (172 a˜172 c as in FIG. 6) extending horizontally to thestages ST₁˜ST_(n+1).

In each stage, for example the (j−1)-th stage ST_(j−1), of the drivingcircuitry CS, the transistor T4 receiving the previous carry outputC_(out)(j−2) may be located near the previous stage ST_(j−2), and thetransistors T1 and T15 receiving the first clock signal CKV from thefirst clock signal line SL2 may be located along the bridge lineconnected to the first clock signal line SL2. The transistors T7, T10and T12 which also receive the first clock signal CKV are located nearthe bridge line connected to the first clock signal line SL2. Thetransistors T11 and T5 receiving the second clock signal CKVB from thesecond signal line SL3 may be located along the bridge line connected tothe second signal line SL3, and the transistor T6 receiving theinitialization signal INT from the initialization signal line SL4 may belocated leftmost. The transistors T2, T3, T8, T9 and T13 receiving thegate-off signal V_(off) from the gate-off signal line SL1 are locatedalong the bridge line connected to the gate-off signal line SL1.

The layout of the transistors in the j-th stage ST_(j) is the same as inthe above (j−1)-th stage ST_(j−1), except that the first clock signalCKV and the first clock signal line SL2 are interchanged with the secondclock signal CKVB and the second clock signal line SL3, respectively.

Signal lines SL and part of the driving circuitry CS are located in thesealant area SA, while the remaining part of the driving circuitry CS islocated in a manufacturing marginal area SA′ of the seal area SA. Thewidth of the manufacturing marginal area SA′ is currently about 0.3 mm,which is the maximum deviation from the target in disposing the sealant350 on the seal area SA.

As explained above, the signal lines and the transistors in the sealarea SA or the manufacturing marginal area SA′ should be designed toallow sufficient light (Lg) from the first substrate 110 to pass throughto harden the sealant 350.

As shown in FIG. 6, the wide signal lines such as SL1˜SL3 have a ladderor net-shaped structures 122 a˜122 c each having apertures through whichlight can easily pass. Accordingly, each signal line SL1˜SL3 may includea first group of branches extending vertically, a second group ofbranches between and connecting the branches of the first group, andapertures enclosed by the first and second groups of branches. Eachbranch or each aperture may be provided a predetermined width to allowlight to easily pass through (e.g., about 20˜30 μm, and preferably about25 μm). The total width of each of signal lines SL1˜SL3 may bedetermined from the increased resistance resulting from the aperturesformed in it. For a signal line that is more than 100 μm wide, thestructure described above has significant advantages.

As shown in FIG. 8, a large transistor located in the sealant area SA orin the manufacturing marginal area SA′ (e.g., the transistor T4 or T15of the FIG. 5) includes smaller transistors connected in parallel andspaced apart from one another by apertures. The width of each smallertransistor or each aperture is provided such as to allow light to easilypass through (e.g., 100 μm or less).

The structure of the thin film transistor array panel 100 including thegate-driving circuitry 400 is now explained in reference to FIGS. 7 and9-11 as well as FIGS. 6 and 8. FIG. 7 is a cross-sectional view takenalong the line VII-VII′ of FIG. 6. FIG. 9 is a cross-sectional viewtaken along the line IX-IX′ of FIG. 8. FIG. 10 is an exemplary layoutview of a pixel in a display area. FIG. 11 is a cross-sectional viewtaken along the line XI-XI′ of FIG. 10.

Gate lines 121 and signal lines 122(122 a˜122 d) of the gate-drivingcircuitry 400 are formed on the insulating substrate 110.

As shown in FIG. 10, the gate lines 121 extend horizontally to thegate-driving circuitry 400 and transmit the gate signals. Each of gateline 121 may include a gate electrode 124, and, in another portion, maybe projections 127.

As shown in FIG. 6, the signal lines 122 a˜122 d extend vertically andtransmit the gate-off signal V_(off), the first and the second clocksignals CKV and CKVB, and the initialization signal INT. Except for thenarrowest one 122 d, the signal lines 122 a˜122 c have ladder ornet-shaped structures including long vertical branches, short horizontalbranches between and connecting adjacent vertical branches, andapertures enclosed by the vertical and horizontal branches. Each branchor each aperture may have a predetermined width so that light can easilypass through, (e.g., about 20˜30 μm, and preferably about 25 μm). Thetotal width of each signal line 122 a˜122 c may be determined from theincreased resistance introduced by apertures formed in it. Such astructure is desirable for a signal line of more than 100 μm wide.

As shown in FIG. 8, the signal lines 122 are electrically connected tothe gates of the transistors of the driving circuitry.

The gate lines 121 and the signal lines 122 are formed out of a lowresistivity conductive layer (e.g., silver, a silver alloy, aluminum, analuminum alloy, copper or a copper alloy). Additionally, the gate lines121 and the signal lines 122 may have a multi-layered structureincluding an additional conductive layer, such as chrome, titanium,tantalum, molybdenum, or their alloys (e.g., MoW alloy), which have goodchemical, physical and electrical contact properties with indium tinoxide (ITO) or indium zinc oxide (IZO). One example of the multi-layeredstructure for the gate lines 121 is Cr/Al—Nd alloy. The gate lines 121and the signal lines 122 may be tapered about 30˜80° to the surface ofthe insulating substrate 110.

A gate insulating layer 140, made of SiNx, for example, covers the gatelines 121 and the signal lines 122. Linear semiconductors 151 or islandtype semiconductors 152 made of, for example, hydrogenated amorphoussilicon, are formed on the gate insulating layer 140. The linearsemiconductor 151 extends vertically and has extension portions 154toward the gate electrode 124. Also, the linear semiconductor 151 widensnear the crossing point with gate line 121 to cover the wide area ofgate line 121. As shown in FIG. 8, the island type semiconductor 152 islocated on the gate electrode.

On the semiconductor layer 151 and 152, a linear or island type silicideor highly doped n+ hydrogenated amorphous silicon may be formed as ohmiccontacts 161, 162 and 165. The linear ohmic contact 161 includes thesecond protrusion 163, which is located on the first extension portion154 of the linear semiconductor 151 in conjunction with the island typeohmic contact 165. The other island type ohmic contacts 162 are locatedon the island type semiconductor 152. The ohmic contacts 161, 162 and162 or the semiconductor 151 and 152 may be tapered about 30˜80°relative to the surface of the substrate 110.

Data lines 171, output electrodes 175, storage capacitor conductors 177,and a bridge lines 172 (172 a˜172 c) are formed on the ohmic contacts161, 162 and 165, and the gate insulating layer 140. As shown in FIG.10, the data lines 171 extend vertically, crossing with the gate lines121, and transmit the data signals (e.g., data voltages). Branches,extended from each data line 171 to the output electrodes 175, forms theinput electrodes 173. The input and output electrodes 173 and 175 inpair are separated and face each other across the gate electrode 124.

The storage capacitor conductor 177 overlaps the projection 127 of thegate line 121.

As shown in FIG. 6, the bridge line 172 a may be formed between thegate-off signal line 122 a and the first clock signal line 122 b, andmay include a vertical branch and horizontal branches extending to eachstage. The bridge lines 172 b and 172 c may be formed between the firstclock signal line 122 b and the second clock signal line 122 c, and mayinclude a vertical branch and a horizontal branch extending to eachstage.

The data lines 171, the output electrodes 175, the bridge lines 172 andthe storage capacitor conductors 177 are made of, for example, a lowresistivity conductive layer of silver, a silver alloy, aluminum, analuminum alloy, copper or a copper alloy. Additionally, the data lines171, the output electrodes 175 and the storage capacitor conductors 177may have a multi-layered structure including an additional conductivelayer of, for example, a refractory metal, such as molybdenum, chrome,titanium, tantalum, or their alloys (e.g. MoW ally).

The lateral sides of the data line 171, the output electrode 175, thebridge lines 172 or the storage capacitor conductor 177 are taperedabout 30˜80° to the surface of the substrate 110. Linear or island typeohmic contacts 161, 162 and 165 are provided between the lowersemiconductor 151 and 152 and the upper data lines 171, the outputelectrode 175 or the bridge line 172 for reducing contact resistance.

On the data lines 171, the output electrodes 175, the bridge lines 172,the storage capacitor conductor 177, and exposed semiconductor 151, apassivation layer 180 can be made of, for example, an easily flattenedand photosensitive organic material, a low dielectric (e.g., less than4.0), insulating material such as a-Si:C:O or a-Si:O:F formed by plasmaenhanced chemical vapor deposition (PECVD), or an inorganic materialsuch as SiNx. The passivation layer 180 also may have a multi-layeredstructure including organic and inorganic layers.

On the passivation layer 180, contact holes 182, 185, 187 and 188 areformed to partially expose the area of the end portion 179 of the datalines 171, the output electrode 175, the storage capacitor conductor177, and the bridge line 172.

On the passivation layer 180, an ITO or IZO layer of pixel electrodes190, contact assistants 82 and connection assistants 88 are formed.Through the contact holes 185 and 187, the pixel electrodes 190 areconnected to the output electrode 175 for receiving the data voltage,and connected to the storage capacitor conductor 177 for transmittingthe data voltage.

Liquid crystal molecules of the liquid crystal layer 330 are rearrangedaccording to the electric field generated by the data voltage applied tothe pixel electrode 190 and the common voltage applied to the counterelectrode. Also, as explained above, the voltage difference between thepixel electrode 190 and the counter electrode 270 remains after thecorresponding thin film transistor turns off. To increase thecapacitance, an additional capacitor, called the storage capacitor CST,may be provided in a parallel connection to the liquid crystalcapacitor.

The storage capacitor C_(ST) can be made by overlapping the pixelelectrode 190 with its neighboring gate line. To enhance the storagecapacitance, the gate line 121 can include extensional portion 127 for awider overlapped area, and furthermore, the storage capacitor conductor177, connected to the pixel electrode and overlapped with theextensional portion 127, may be located under the passivation layer 180.Also, the pixel electrode 190 can be overlapped with the neighboringgate lines or data lines for a higher aperture ratio.

The contact assistant 82, which is optional, may be connected to thedata lines end portion 179 via contact hole 182 to enhance a contactproperty with an external device and to protect the data lines endportion 179. The auxiliary electrodes 88 may be connected to the signallines 122 and the bridge lines 172 via contact holes 188 and 189,respectively. Auxiliary electrode 88 need not be divided into smallerparts if the auxiliary electrode 88 is made of a transparent conductivemetal through which light can easily pass. Moreover, the contactresistance decreases according to the size of the auxiliary electrode88.

According to one or more embodiments of the present invention,transparent conductive polymer material can be used as the pixelelectrode 190. Alternatively, for reflective LCD, opaque reflectivemetal also can be used as the pixel electrode 190. The contact assistant82 can be made of a different material from the pixel electrode 190 suchas ITO and/or IZO.

According to one or more embodiments of the present invention, thesignal lines 122 (122 a˜122 d) may be formed of the same layer as thedata lines 171, and the bridge lines 172 (172 a˜172 c) may be formed ofthe same layer as the gate lines 121.

Embodiments described above illustrate but do not limit the invention.Numerous modifications and variations are possible within the scope ofthe present invention. Accordingly, the scope of the invention isdefined only by the following claims.

1. A thin film transistor array panel, the thin film transistor arraypanel having a gate line, a data line, a pixel electrode, a thin filmtransistor and a gate driving circuit formed on a substrate, wherein thegate driving circuit is formed simultaneously with the thin filmtransistor and comprises: a driving circuitry outputting a gate signalto the gate line; a first signal line electrically connected to the gatedriving circuit, wherein an aperture of a predetermined width is formedin the first signal line.
 2. The thin film transistor array panel ofclaim 1, wherein a width of a segment of the first signal line issmaller than or equal to 100 μm.
 3. The thin film transistor array panelof claim 2, wherein the segment is a part of a boundary enclosing theaperture, and the width of the segment is between 20 μm and 30 μm. 4.The thin film transistor array panel of claim 1, wherein the firstsignal line is formed of a same layer as the gate line or the data line.5. The thin film transistor array panel of claim 1, wherein the firstsignal line comprises at least two conductive material layers.
 6. Thethin film transistor array panel of claim 5, wherein one of theconductive material layers includes aluminum, aluminum alloy, silver,silver alloy, chrome, molybdenum, or molybdenum alloy.
 7. The thin filmtransistor array panel of claim 1, wherein the gate-driving circuitfurther comprises second and third signal lines, and the drivingcircuitry includes a shift register having a plurality of cascadedstages generating an output signal.
 8. The thin film transistor arraypanel of claim 7, wherein the first, second and third signal linestransmit a gate-off signal, a first clock signal and a second clocksignal, respectively, to the shift register, the second clock signalhaving a phase different from the first clock.
 9. The thin filmtransistor array panel of claim 7, wherein each of the first, second andthird signal lines has an aperture.
 10. The thin film transistor arraypanel of claim 7, wherein the gate driving circuit further comprises afourth signal line transmitting an initialization signal to the shiftregister.
 11. The thin film transistor array panel of claim 10, whereinthe gate driving portion further comprises a bridge line electricallyconnecting one of the first, second, third and fourth lines to the shiftregister.
 12. The thin film transistor array panel of claim 11, whereinthe bridge line is formed of a different layer from the one of thefirst, second, third and fourth signal lines.
 13. The thin filmtransistor array panel of claim 12, wherein the bridge line iselectrically connected to the one of the first, second, third and fourthsignal lines through a connection assistant.
 14. The thin filmtransistor array panel of claim 12, wherein the connection assistant istransparent and connected to the bridge line and the one of the first,second, third and fourth signal lines through first and second contactholes, respectively.
 15. The thin film transistor array panel of claim1, wherein the driving circuitry includes a plurality of transistorsconnected in parallel and adjusted to form an aperture of apredetermined width among the transistors.
 16. The thin film transistorarray panel of claim 15, wherein the aperture has a width that is lessthan or equal to 100 μm.
 17. A thin film transistor array panelcomprising: an insulating substrate; a plurality of gate lines and aplurality of data lines formed on the insulating substrate; a pluralityof pixel electrodes formed on each pixel region defined by the pluralityof gate lines and the plurality of data lines; a plurality of thin filmtransistors electrically connected to one of the plurality of gatelines, one of the plurality of data lines and one of the plurality ofpixel electrodes; and a gate-driving circuit formed simultaneously withthe thin film transistor on the insulating substrate, the gate-drivingcircuit including a plurality of signal lines transmitting externalsignals and a driving circuitry outputting gate signals to each of theplurality of gate lines in response to the external signals, wherein theplurality of signal lines includes a ladder or net shaped signal line.18. The thin film transistor array panel of claim 17, wherein the ladderor net-shaped signal line includes a plurality of first branches and aplurality of second branches between and connecting the two adjacentfirst branches, the first and second branches enclosing an aperture. 19.The thin film transistor array panel of claim 17, wherein one of thefirst branches has a width that is between 20 μm and 30 μm.
 20. The thinfilm transistor array panel of claim 17, the aperture has a widthbetween 20 μm and 30 μm.
 21. A thin film transistor array panel,comprising: an insulating substrate; a plurality of gate lines and aplurality of data lines formed on the insulating substrate; a pluralityof pixel electrodes, each pixel formed on each pixel region defined bythe plurality of gate lines and the plurality of data lines; a pluralityof switching elements, each switching element electrically connected toone of the plurality of gate lines, one of the plurality of data linesand one of the plurality of pixel electrodes; and a gate driving circuitformed simultaneously with the thin film transistor on the insulatingsubstrate, the gate driving circuit including a plurality of signallines transmitting gate driving signals and a driving circuitryoutputting gate signals to each of the plurality of gate lines inresponse to the gate-driving signals, wherein the driving circuitryincludes a plurality of transistors connected in parallel and adjustedto form an aperture among the transistors.
 22. The thin film transistorarray panel of claim 21, wherein the aperture has a width that is lessthan or equal to 100 μm.
 23. A display device comprising: a displaypanel having a first substrate with a plurality of gate lines, agate-driving circuit and a plurality of data lines formed thereon,wherein the gate-driving circuit is formed simultaneously with the thinfilm transistor, a second substrate, a sealant disposed between the twosubstrates and a liquid crystal layer disposed into a space enclosed bythe two substrates and the sealant, and a data driving circuitoutputting data signals to the plurality of data lines, wherein thegate-driving circuit includes a plurality of signal lines transmittinggate-driving signals and a driving circuitry outputting gate signals tothe plurality of gate lines in response to the gate-driving signals, andwherein an aperture is formed on at least one signal line of theplurality of signal line.
 24. The display device of claim 23, whereinthe sealant includes a photosetting material, and the sealant overlapsthe aperture at least in part.
 25. The display device of claim 24,wherein an opaque region is formed on the second substrate, and theopaque region overlaps the sealant at least in part.
 26. A method ofproviding a display device, the method comprising: forming a pluralityof gate lines, a plurality of data lines, a first plurality of thin filmtransistors, and a gate driving circuit on a first substrate, whereinthe gate driving circuit is formed simultaneously with the thin filmtransistor and includes a signal line with an aperture and a drivingcircuitry that comprises a second plurality of thin film transistors;forming an opaque region on a second substrate; providing a liquidcrystal layer disposed on one of the first and second substrates;providing a sealant disposed one of the first and second substrates;providing the first and second substrates aligned to each other; andproviding the sealant exposed to a light through the aperture.
 27. Themethod of providing a display device of claim 26, wherein the aperturehas a width between 20 μm and 30 μm.